all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 10 rev. 02.1, 2016-06-15 ptfb072707fh thermally-enhanced high power rf ldmos fet 270 w, 28 v, 728 C 768 mhz description the ptfb072707fh is a ldmos fet intended for use in multi- standard cellular power amplifier applications. features include input and output matching, high gain and thermally-enhanced package with earless flanges. manufactured with infineon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. ptfb072707fh package h-34288g-4/2 rf specifications one-carrier wcdma characteristics (tested in infineon production test fixture) v dd = 28 v, i dq = 2.0 a, p out = 60 w average, ? = 768 mhz. 3gpp signal: 3.84 mhz channel bandwidth, 10 db peak/average @ 0.01% ccdf. characteristic symbol min typ max unit gain g ps 18 18.5 db drain effciency h d 38 39 % adjacent channel power ratio acpr C33 C32.5 dbc features ? broadband internal matching ? wide video bandwidth ? typical pulsed performance, 768 mhz, 28 v (10 s pulse width,10% duty cycle, class ab) - output power at p 1db = 320 w - gain = 17.5 db - efficiency = 60% ? integrated esd protection: human body model (hbm) class 2 minimum (per jesd22-a114) ? low thermal resistance ? rohs compliant ? capable of handling 5:1 vswr @ 28 v, 270 w (cw) output power 0 10 20 30 40 50 16 17 18 19 20 21 34 36 38 40 42 44 46 48 50 52 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2.0 a, ? = 728 mhz 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw gain efficienc y b072707fh-gr1
ptfb072707fh data sheet 2 of 10 rev. 02.1, 2016-06-15 dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a v ds = 63 v, v gs = 0 v i dss 10.0 a gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.05 w operating gate voltage v ds = 28 v, i dq = 2.0 a v gs 2.5 3.8 4.5 v maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v junction temperature t j 200 c storage temperature range t stg C40 to +150 c thermal resistance (t case = 70c, 240 w cw) r q jc 0.17 c/w ordering information type and version order code package and description shipping ptfb072707fh v1 r0 ptfb072707fhv1r0xtma1 h-34288g-4/2, ceramic open-cavity, earless flange tape & reel, 50 pcs ptfb072707fh v1 r250 PTFB072707FHV1R250XTMA1 h-34288g-4/2, ceramic open-cavity, earless flange tape & reel, 250 pcs
data sheet 3 of 10 rev. 02.1, 2016-06-15 ptfb072707fh 0 10 20 30 40 50 16 17 18 19 20 21 34 36 38 40 42 44 46 48 50 52 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2.0 a, ? = 748 mhz, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw gain efficienc y b072707fh-gr2 0 10 20 30 40 50 16 17 18 19 20 21 34 36 38 40 42 44 46 48 50 52 drain efficiency (%) gain (db) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2.0 a, ? = 768 mhz 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw gain efficienc y b072707fh-gr3 0 20 40 60 -50 -40 -30 -20 34 36 38 40 42 44 46 48 50 52 drain efficiency (%) imd (dbc), acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2.0 a, ? = 728 mhz 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw imd low imd up acpr efficiency b072707fh-gr4 0 20 40 60 -50 -40 -30 -20 34 36 38 40 42 44 46 48 50 52 drain efficiency (%) imd (dbc), acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2.0 a, ? = 748 mhz 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw imd low imd up acpr efficiency b072707fh-gr5 typical performance (data taken in an infineon production test fixture)
ptfb072707fh data sheet 4 of 10 rev. 02.1, 2016-06-15 0 20 40 60 -50 -40 -30 -20 34 36 38 40 42 44 46 48 50 52 drain efficiency (%) imd (dbc), acpr (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2.0 a, ? = 768 mhz 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw imd low imd up acpr efficiency b072707fh-gr6 -55 -45 -35 -25 -15 32 36 40 44 48 52 imd (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 2.0 ma 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw 728 mhz imd low 728 mhz imd up 748 mhz imd low 748 mhz imd up 768 mhz imd low 768 mhz imd up b072707fh-gr7 0 15 30 45 60 75 16 17 18 19 20 21 34 36 38 40 42 44 46 48 50 52 54 56 efficiency (%) power gain (db) output power (dbm) cw performance at selected supply voltage i dq = 2.0 a, ? = 728 mhz gain efficienc y v dd = 24 v v dd = 28 v v dd = 32 v b072707fh-gr9 typical performance (cont.) 0 15 30 45 60 75 16 17 18 19 20 21 36 40 44 48 52 56 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 2.0 a efficienc y gain b072707fh-gr8 728 mhz 748 mhz 768 mhz
data sheet 5 of 10 rev. 02.1, 2016-06-15 ptfb072707fh 0 15 30 45 60 75 16 17 18 19 20 21 34 36 38 40 42 44 46 48 50 52 54 56 efficiency (%) power gain (db) output power (dbm) cw performance at selected supply voltage i dq = 2.0 a, ? = 748 mhz gain efficienc y v dd = 24 v v dd = 28 v v dd = 32 v b072707fh-gr10 0 15 30 45 60 75 16 17 18 19 20 21 34 36 38 40 42 44 46 48 50 52 54 56 efficiency (%) power gain (db) output power (dbm) cw performance at selected supply voltage i dq = 2.0 a, ? = 768 mhz gain efficienc y v dd = 24 v v dd = 28 v v dd = 32 v b072707fh-gr11 -20 -15 -10 -5 0 17 18 19 20 21 600 650 700 750 800 850 900 input return loss (db) power gain (db) frequency (mhz) small signal cw performance v dd = 28 v, i dq = 2.0 a gain irl b072707fh-gr12 typical performance (cont.)
ptfb072707fh data sheet 6 of 10 rev. 02.1, 2016-06-15 broadband circuit impedance freq [mhz] z source w z load w r jx r jx 700 0.29 C0.64 0.80 C1.52 710 0.29 C0.57 0.81 C1.45 720 0.28 C0.51 0.82 C1.39 730 0.28 C0.44 0.83 C1.33 740 0.28 C0.38 0.84 C1.27 750 0.28 C0.32 0.85 C1.22 760 0.28 C0.25 0.86 C1.17 770 0.27 C0.19 0.88 C1.11 780 0.27 C0.13 0.89 C1.07 790 0.27 C0.06 0.89 C1.02 800 0.27 0.00 0.90 C0.97 pulsed cw signal: 10 sec, 10% duty cycle, 28 v, 2.0 a p 1db class ab max output power max pae freq (mhz) zs ( w) zl ( w) gain (db) p out (dbm) p out (w) pae (%) zl ( w) gain (db) p out (dbm) p out (w) pae (%) 728 0.54 C jj0.91 0.80 C j1.14 16.19 55.90 389 52.0 2.42 C j0.70 19.91 53.47 222 66.5 750 0.52 C j0.92 0.81 C j1.10 16.23 55.70 372 51.6 2.22 C j1.03 19.06 53.48 223 64.1 758 0.44 C j0.80 0.82 C j1.08 16.97 55.66 368 52.2 2.41 C j0.72 19.97 53.16 208 66.2 778 0.44 C j0.93 0.84 C j1.12 17.00 55.39 346 50.5 2.37 C j0.39 20.10 52.61 182 64.4 803 0.50 C j0.90 0.83 C j1.07 16.92 55.37 344 51.9 2.54 C j0.04 20.33 52.00 158 66.5 pulsed cw signal: 10 sec, 10% duty cycle, 28 v, 2.0 a p 3db class ab max output power max pae freq (mhz) zs ( w) zl ( w) gain (db) p out (dbm) p out (w) pae (%) zl ( w) gain (db) p out (dbm) p out (w) pae (%) 728 0.54 C j0.91 0.81 C j1.26 17.86 56.52 449 55.4 2.42 C j0.76 14.21 53.93 247 65.8 750 0.52 C j0.92 0.81 C j1.21 17.03 56.37 433 54.7 2.20 C j1.09 14.22 54.13 259 65.6 758 0.44 C j0.80 0.85 C j1.22 17.68 56.37 433 56.8 2.21 C j1.03 15.07 54.06 255 66.3 778 0.44 C j0.93 0.87 C j1.23 17.74 56.13 410 54.4 2.16 C j1.01 15.08 54.05 254 66.4 803 0.50 C j0.90 0.88 C j1.30 18.33 56.07 404 55.1 2.54 C j0.04 14.97 52.65 183 67.2 z source z load g s d load pull performance
data sheet 7 of 10 rev. 02.1, 2016-06-15 ptfb072707fh reference circuit, tuned for 728 to 768 mhz dut ptfb072707fh test fixture part no. ltn/ptfb072707fh v1 pcb 0.508 mm [0.020"] thick, e r = 3.66 rogers 4350, 1 oz. copper find gerber files for this test fixture on the infineon web site at ( http://www.infineon.com/rfpower ) components information component description manufacturer p/n input c101 chip capacitor, 1.7 pf atc atc100b1r7cw500xb c102, c105 chip capacitor, 5.6 pf atc atc100b5r6bw500xb c103 chip capacitor, 8.2 pf atc atc100b8r2cw500xb c104, c106, c107, c108 chip capacitor, 12 pf atc atc100b120jw500xb c109 chip capacitor, 33 pf atc atc100b330jw c110, c115 chip capacitor, 56 pf atc atc100b560jt c111 capacitor, 20000 pf atc atc200b203mw c112 capacitor, 10000 pf atc atc200b103mw c113 chip capacitor, 4.7 pf atc atc100b4r7ct c114 chip capacitor, 4.7 f nichicon f931c475maa table cont. next page circuit assembly diagram (not to scale) rf_out ptfb072707_out_01 ro4350, .020 (62) c216 c211 c215 c213 c223 c214 c204 c206 c205 c212 c203 c219 c220 c207 c209 c210 c202 c221 c201 c218 c217 + 10 f + 10 f c222 v dd v dd (62) ro4350, .020 ptfb072707_in_01 c802 c805 r801 c801 c804 r802 c803 r804 r805 r803 c107 c115 c103 c113 c111 c109 c114 c110 c101 c105 r102 c104 c108 c106 c102 r103 r101 c112 v dd s3 s1 s2 rf_in c208 b 0 7 2 7 0 7 f h _ c d _ r 2 _ 2 0 1 5 - 0 9 - 2 2 ptfb0727077fh ptfb072707fh
ptfb072707fh data sheet 8 of 10 rev. 02.1, 2016-06-15 components information (cont.) component description manufacturer p/n input (cont.) c801, c804 chip capacitor, 0.1 f panasonic electronic components ecj-3vb1h104k c802, c803, c805 chip capacitor, 1000 pf panasonic ecj-1vb1h102k r101, r103, r803 resistor, 10 ohm panasonic erj-8geyj100v r102 resistor, 5.1k ohm panasonic electronic components erj-8geyj512v r801 resistor, 100 ohm panasonic electronic components erj-8geyj101v r802 resistor, 1000 ohm panasonic electronic components erj-8geyj102v r804 resistor, 1.3k ohm panasonic electronic components erj-3geyj132v r805 resistor, 1.2k ohm panasonic electronic components erj-3geyj122v s1 transistor fairchild semiconductor bcp56 s2 potentiometer, 2k ohm bourns inc. 3224w-1-202e s3 voltage regulator fairchild semiconductor lm7805 output c201 chip capacitor, 1 pf atc atc100b1r0cw500xb c202, c203, c206, c207, c209, c210, c220, c221 capacitor, 10 f taiyo yuden umk325c7106mm-t c204, c219 chip capacitor, 1 f avx corporation 2225pc105kat1a c205, c211 chip capacitor, 10 f garrett 281m5002106k c208, c222 capacitor, 100 f panasonic eee-fp1v101ap c212 chip capacitor, 56 pf atc atc100b560jt c213, c214 chip capacitor, 3.6 pf atc atc100b3r6cw c215, c216 chip capacitor, 1.3 pf atc atc100b1r3cw c217, c218 chip capacitor, 2.2 pf atc atc100b2r2cw c223 chip capacitor, 3 pf atc atc100b3r0cw500xb reference circuit (cont.)
data sheet 9 of 10 rev. 02.1, 2016-06-15 ptfb072707fh package outline specifications package h-34288g-4/2 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm; alternate dimensions are inches. 3. all tolerances 0.127 [.005]. 4. pins: d - drain; g - gate; s (fange) - source; v - v dd . 5. lead thickness: 0.10 + 0.051/C0.025 [.005 +.002/C.001]. 6. gold plating thickness: 0.25 micron [10 microinch] max. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d C drain; g C gate; s C source; v C v dd . 5. lead thickness: 0.10 + 0.051/-0.025 mm [.005 +0.002/-0.001 inch]. 6. gold plating thickness: 0.25 micron [10 microinch] max. 2x 2. 29 [. 090 ] 1 . 98 [. 078 ] 21. 72 [. 855 ] 2 x 30. 0 4x r0 . 51 +. 38 - . 13 [ r . 020 +. 015 - . 005 ] 2x 17 . 75 [. 699 ] c l c l c l 45 x . 64 [. 025 ] g d v v 16 . 76 0.51 [. 660 . 020 ] 9 . 78 [. 385 ] 4 x 3.490 . 51 [. 138 . 020 ] c l 9 . 40 [. 370 ] d 4 . 04 +0.25 - 0. 13 [ . 159 +. 010 - . 005 ] sph 1. 57 [. 062 ] 1. 02 [. 040 ] 23 . 11 [. 910 ] s 22. 35 0.20 [. 880 . 008 ] h - 342 88 g - 4 / 2 _ s l _ po _ 03 _ 08 - 08 - 2013
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